Atmospheric Pressure - flow dynamics:
Vectored Flow Epitaxy or VFE is a new atmospheric pressure technique for MOCVD. VFE technique utilises individual injection of the group III and group V precursors to minimise pre-reactions and adduct formation, and the precursors can also be introduced via different carrier gases. The special injectors direct the precursors only over the wafer, thereby increasing the MO usage efficiency. Each injector is designed to be easily modified to allow the system to be changed freely between alloys e.g., GaN to GaAs or ZnO to InAs.
Borne out of years of CFD calculations, computer modelling and growth testing, the VFE is designed to improve the yield of the MOCVD process. The spinning wafers pass under the group III injector, which is tuned to deliver a unit mass of group III over a unit area of the wafer. Each pass under the injectors grows several uniform atomic layers. It is widely known that atmospheric pressure systems produce more efficient deposition and the use of injectors directing the precursor onto the wafer further improves the efficiency.

• Atmospheric Pressure Operation
• Uniform Deposition
• Efficient use of Precursors

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