InN Bandgap:
Currently the InN bandgap is believed to be around 1.9eV and is shown here on the current version of our mousemats.
New data suggests that the bandgap should be around 0.7eV.
InN, Wurtzite (hexagonal). Photoluminescence spectra of InN layers with different carrier concentrations.
- 1 - n = 6x1018 cm-3 (MOCVD grown sample);
- 2 - n = 9x1018 cm-3 (MOMBE grown sample);
- 3 - n = 1.1x1019 cm-3 (MOMBE grown sample);
- 4 - n = 4.2x1019 cm-3 (PAMBE grown sample).
Solid lines show the theoretical fitting cures based on a model of interband recombination in degenerated semiconductors. As a result, the true value of InN band gap Eg~0.7 eV was established.
Davydov et al. Phys. Stat. Solidi (b) 230 (2002b), R4
Contact authors: Valery Yu. Davydov
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inn@emf.co.uk
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